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| SEMICONDUCTOR TECHNICAL DATA General Description KHB3D0N90P1/F1/F2 N CHANNEL MOS FIELD EFFECT TRANSISTOR KHB3D0N90P1 A O C F E G B Q I K M P L J D N N H DIM A B C D E F G H I J K L M N O 1 2 3 This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switch mode power supplies. MILLIMETERS FEATURES VDSS= 900V, ID= 3A Drain-Source ON Resistance : RDS(ON)=4.5 Qg(typ.) = 25nC @VGS = 10V _ 9.9 + 0.2 15.95 MAX 1.3+0.1/-0.05 _ 0.8 + 0.1 _ 3.6 + 0.2 _ 2.8 + 0.1 3.7 0.5+0.1/-0.05 1.5 _ 13.08 + 0.3 1.46 _ 1.4 + 0.1 _ 1.27 + 0.1 _ 2.54 + 0.2 _ 4.5 + 0.2 _ 2.4 + 0.2 _ 9.2 + 0.2 1. GATE 2. DRAIN 3. SOURCE P Q MAXIMUM RATING (Tc=25 ) RATING TO-220AB KHB3D0N90F1 CHARACTERISTIC SYMBOL F KHB3D0N90F1 UNIT KHB3D0N90P1 KHB3D0N90F2 900 30 3.0 12 450 13 4.0 130 43 0.34 150 -55 150 3.0* A 12* mJ D A C B Drain-Source Voltage Gate-Source Voltage Drain Current @TC=25 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25 Derate above25 VDSS VGSS ID IDP EAS EAR dv/dt PD 1.04 Tj Tstg V V O E DIM MILLIMETERS L M R mJ V/ns W W/ N N H Q 1 2 3 A B C D E F G H J K L M N O Q R _ 10.16 + 0.2 _ 15.87 + 0.2 _ 2.54 + 0.2 _ 0.8 + 0.1 _ 3.18 + 0.1 _ 3.3 + 0.1 _ 12.57 + 0.2 _ 0.5 + 0.1 13.0 MAX _ 3.23 + 0.1 1.47 MAX 1.47 MAX _ 2.54 + 0.2 _ 6.68 + 0.2 _ 4.7 + 0.2 _ 2.76 + 0.2 K G J 1. GATE 2. DRAIN 3. SOURCE TO-220IS (1) Maximum Junction Temperature Storage Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-toAmbient KHB3D0N90F2 A C RthJC RthJA 0.96 62.5 2.9 62.5 /W /W S E F P DIM MILLIMETERS * : Drain current limited by maximum junction temperature. K L L R PIN CONNECTION D M D D N N H G 1 2 3 A B C D E F G H J K L M N P Q R S _ 10.0 + 0.3 _ 15.0 + 0.3 _ 2.70 + 0.3 0.76+0.09/-0.05 _ 3.2 +0.2 _ 3.0 + 0.3 _ 0.3 12.0 + 0.5+0.1/-0.05 _ 13.6 + 0.5 _ 3.7 + 0.2 1.2+0.25/-0.1 1.5+0.25/-0.1 _ 2.54 + 0.1 _ 6.8 + 0.1 _ 4.5 + 0.2 _ 2.6 + 0.2 0.5 Typ G Q J 1. GATE 2. DRAIN 3. SOURCE S TO-220IS 2007. 9. 10 Revision No : 0 B 1/7 KHB3D0N90P1/F1/F2 ELECTRICAL CHARACTERISTICS (Tc=25 CHARACTERISTIC ) TEST CONDITION MIN. TYP. MAX. UNIT SYMBOL Static Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Gate Threshold Voltage Drain Cut-off Current Gate Leakage Current Drain-Source ON Resistance BVDSS BVDSS/ Tj Vth IDSS IGSS RDS(ON) ID=250 A, VGS=0V ID=250 A, Referenced to 25 VDS=VGS, ID=250 A VDS=900V, VGS=0V, VGS= 30V, VDS=0V VGS=10V, ID=1.5A 900 2.0 1 4.0 4.0 10 100 4.5 V V/ V A nA Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay time Turn-on Rise time Turn-off Delay time Turn-off Fall time Input Capacitance Output Capacitance Reverse Transfer Capacitance Source-Drain Diode Ratings Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge IS VGS Note 5) Essentially independent of operating temperature. 2007. 9. 10 Revision No : 0 2/7 KHB3D0N90P1/F1/F2 ID - VDS 10 1 VGS TOP : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom: 5.5V ID - VGS 10 1 VDS = 50V 250s Pulse Test Drain Current ID (A) 10 0 Drain Current ID (A) 10 0 150 C 25 C -55 C 10 -1 10 -2 10 -1 10 0 10 1 10 -1 2 4 6 8 10 Drain - Source Voltage VDS (V) Gate - Source Voltage VGS (V) BVDSS - Tj Normalized Breakdown Voltage BVDSS 4.2 VGS = 0V IDS = 250 RDS(ON) - ID On - Resistance RDS(ON) () 1.2 4.0 3.8 VGS = 10V 1.1 1.0 3.6 3.4 3.2 0 0.9 0.8 -100 1 2 3 -50 0 50 100 150 Junction Temperature Tj ( C ) Drain Current ID (A) IS - VSD RDS(ON) - Tj Reverse Drain Current IS (A) 10 1 VGS = 50V 250s Pulse Test 2.5 Normalized On Resistance VGS =10V ID = 1.5A 2.0 1.5 1.0 0.5 0.0 -100 10 0 150 C 25 C 10 -1 0.2 0.4 0.6 0.8 1.0 1.2 -50 0 50 100 150 Source - Drain Voltage VSD (V) Junction Temperture Tj ( C) 2007. 9. 10 Revision No : 0 3/7 KHB3D0N90P1/F1/F2 C - VDS 3000 2500 Ciss 12 Qg- VGS Gate - Source Voltage VGS (V) VGS = 0V Frequency = 1MHz ID = 9.0A VDS = 180V VDS = 450V 10 8 Capacitance (pF) 2000 1500 Coss VDS = 720V 6 4 2 0 1000 Crss 500 0 10-1 100 101 0 5 10 15 20 25 30 Drain - Source Voltage VDS (V) Gate - Charge Qg (nC) Safe Operation Area (KHB3D0N90P1) 102 Operation in this area is limited by RDS(ON) 100s Safe Operation Area (KHB3D0N90F1) Operation in this area is limited by RDS(ON) Drain Current ID (A) 101 1ms 10ms DC Drain Current ID (A) 101 100s 1ms 10ms 100 100 100ms DC 10-1 Tc= 25 C Tj = 150 C -2 Single nonrepetitive pulse 10 10-1 Tc= 25 C Tj = 150 C Single nonrepetitive pulse 100 101 102 103 10-2 0 10 101 102 103 Drain - Source Voltage VDS (V) Drain - Source Voltage VDS (V) ID - Tj 4 Drain Current ID (A) 3 2 1 0 25 50 75 100 125 150 Junction Temperature Tj ( C ) 2007. 9. 10 Revision No : 0 4/7 KHB3D0N90P1/F1/F2 Rth {KHB3D0N90P1} 100 Duty=0.5 Transient Thermal Resistance [ C / W] 0.2 10-1 0.1 0.05 PDM t1 t2 0.02 0.0 1 g Sin le Pu lse - Duty Factor, D= t1/t2 - RthJC = Tj(max) - Tc PD 100 101 10-2 10-5 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) Rth {KHB3D0N90F1} Transient Thermal Resistance [ C / W] 100 Duty=0.5 0.2 0.1 0.05 10-1 0.02 0.01 Sin gle Pu PDM t1 t2 lse 10-2 10-5 - Duty Factor, D= t1/t2 Tj(max) - Tc - RthJC = PD 10-3 10-2 10-1 100 101 10-4 Square Wave Pulse Duration (sec) 2007. 9. 10 Revision No : 0 5/7 KHB3D0N90P1/F1/F2 - Gate Charge VGS 10 V ID Fast Recovery Diode 0.8 VDSS 1.0 mA ID VDS Qgs VGS Qgd Qg Q - Single Pulsed Avalanche Energy EAS= 1 LIAS2 2 BVDSS BVDSS - VDD BVDSS L IAS 0.5 VDSS 25 VDS ID(t) VDD 10 V VGS VDS(t) Time tp 2007. 9. 10 Revision No : 0 6/7 KHB3D0N90P1/F1/F2 - Resistive Load Switching VDS RL 0.5 VDSS 25 VGS 10% tf 10V td(on) VGS ton tr td(off) toff 90% VDS - Source - Drain Diode Reverse Recovery and dv /dt Body Diode Forword Current DUT VDS IF ISD (DUT) IRM di/dt 0.8 x VDSS driver IS VDS (DUT) Body Diode Reverse Current Body Diode Recovery dv/dt VSD 10V VGS Body Diode Forword Voltage drop VDD 2007. 9. 10 Revision No : 0 7/7 |
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